UTT10N10 Spec and Replacement
Type Designator: UTT10N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.142 Ohm
Package: TO-251 TO-252
UTT10N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UTT10N10 Specs
utt10n10.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT10N10 Preliminary Power MOSFET 10A, 100V N-CHANNEL MOSFET DESCRIPTION The UTC UTT10N10 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commut... See More ⇒
utt100n08.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT100N08 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N08 is an N-channel enhancement mode Power FET using UTC s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation... See More ⇒
utt100p03.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT100P03 Preliminary Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT100P03 is suitable for low voltage an... See More ⇒
utt100n05.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT100N05 Preliminary Power MOSFET 100A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100N05 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with minimum on-state resistance and superior switching performance. FEATURES * RDS(ON)= 7m @ VGS=10V, ID= 50A RDS(ON)= 10m @ VGS=4.5V,... See More ⇒
Detailed specifications: UTT18P10 , UTT25P10 , UTT50P10 , UTT70P10 , UTT80P06 , UK4145 , UTT100N06 , UTT100N08 , IRFP250N , UTT120N06 , UTT150N06 , UTT20N10 , UTT25N08 , UTT30N08 , UTT30N10 , UTT36N10 , UTT50N06 .
History: AP4455GYT | SUP85N10-10
Keywords - UTT10N10 MOSFET specs
UTT10N10 cross reference
UTT10N10 equivalent finder
UTT10N10 lookup
UTT10N10 substitution
UTT10N10 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AP4455GYT | SUP85N10-10
LIST
Last Update
MOSFET: AP30H150K | AP30H150G | AP3065SD
Popular searches
2n388 | 2n3645 | 2n1307 | 2sa747 | a1941 | 2sd424 datasheet | 2sc536 datasheet | bd140 transistor equivalent

