UTT10N10 Datasheet. Specs and Replacement
Type Designator: UTT10N10 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.142 Ohm
📄📄 Copy
UTT10N10 substitution
- MOSFET ⓘ Cross-Reference Search
UTT10N10 datasheet
utt10n10.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT10N10 Preliminary Power MOSFET 10A, 100V N-CHANNEL MOSFET DESCRIPTION The UTC UTT10N10 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commut... See More ⇒
utt100n08.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT100N08 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N08 is an N-channel enhancement mode Power FET using UTC s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation... See More ⇒
utt100p03.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT100P03 Preliminary Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT100P03 is suitable for low voltage an... See More ⇒
utt100n05.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT100N05 Preliminary Power MOSFET 100A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100N05 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with minimum on-state resistance and superior switching performance. FEATURES * RDS(ON)= 7m @ VGS=10V, ID= 50A RDS(ON)= 10m @ VGS=4.5V,... See More ⇒
Detailed specifications: UTT18P10, UTT25P10, UTT50P10, UTT70P10, UTT80P06, UK4145, UTT100N06, UTT100N08, IRF630, UTT120N06, UTT150N06, UTT20N10, UTT25N08, UTT30N08, UTT30N10, UTT36N10, UTT50N06
Keywords - UTT10N10 MOSFET specs
UTT10N10 cross reference
UTT10N10 equivalent finder
UTT10N10 pdf lookup
UTT10N10 substitution
UTT10N10 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
MOSFET Parameters. How They Affect Each Other
History: SMG2343P | RUH85120S | SVF4N60CAT | STD3N25-1 | IRF7503PBF | IRF8304M | APT904RBN
🌐 : EN ES РУ
LIST
Last Update
MOSFET: CS95118 | CS85105A | CS75N45 | CS72N12 | CS55N50 | CS48N75A | CS40N27 | MSQ60P04D | MSQ40P07D | MSQ30P40D
Popular searches
2n388 | 2n3645 | 2n1307 | 2sa747 | a1941 | 2sd424 datasheet | 2sc536 datasheet | bd140 transistor equivalent
