UTT6N10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UTT6N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 1.3 nS
Cossⓘ - Capacitancia de salida: 46 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
Encapsulados: SOT-223
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UTT6N10 datasheet
utt6n10.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT6N10 Power MOSFET 100V, 6A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT6N10 is an N-channel enhancement mode Power FET, it uses UTC s advanced technology to provide customers a 1 minimum on-state resistance, high switching speed and ultra low SOT-223 gate charge. The UTC UTT6N10 is usually used in DC-DC Conversion. FEATURES
utt6n10z.pdf
SMD Type MOSFET Transistors N-Channel Power MOSFET UTT6N10Z Features Unit mm SOT-223 6.50 0.2 RDS(on) = 80m @VGS = 10V,ID=6A 3.00 0.1 High Switching Speed Low Crss (Typically 3.1pF) 4 Low Gate Charge (Typically 4.3nC) 1 2 3 2.Drain 0.250 2.30 (typ) 0.84 (max) Gauge Plane 0.66 (min) 1.Gate 1.Gate 2.Drain 3.Source 4.60 (typ) 4.Drain 3.Sou
utt6np10l-tn4-r utt6np10g-tn4-r utt6np10l-s08-r utt6np10g-s08-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT6NP10 Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION 1 SOP-8 The UTC UTT6NP10 incorporates an N-channel MOSFET and a P-channel MOSFET it uses UTC s advanced technology to provide customers a minimum on-state resistance and high-speed switching, thereby enabling high-density mounting. The UTC UTT6NP10 is univers
Otros transistores... UTT20N10, UTT25N08, UTT30N08, UTT30N10, UTT36N10, UTT50N06, UTT60N06, UTT60N10, K3569, UTT75N08, UTT75N75, UTT80N06, UTT80N08, UTT80N75, UDN302, UT2301, UT2301Z
History: UTT50N06
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