UTT6N10 Datasheet and Replacement
Type Designator: UTT6N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 1.3 nS
Cossⓘ - Output Capacitance: 46 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SOT-223
UTT6N10 substitution
UTT6N10 Datasheet (PDF)
utt6n10.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT6N10 Power MOSFET 100V, 6A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT6N10 is an N-channel enhancement mode Power FET, it uses UTCs advanced technology to provide customers a 1minimum on-state resistance, high switching speed and ultra low SOT-223gate charge. The UTC UTT6N10 is usually used in DC-DC Conversion. FEATURES
utt6n10z.pdf

SMD Type MOSFETTransistorsN-Channel Power MOSFETUTT6N10Z Features Unit:mmSOT-2236.500.2 RDS(on) = 80m @VGS = 10V,ID=6A3.000.1 High Switching Speed Low Crss (Typically 3.1pF)4 Low Gate Charge (Typically 4.3nC) 1 2 32.Drain0.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.Gate1.Gate 2.Drain3.Source4.60 (typ) 4.Drain3.Sou
utt6np10l-tn4-r utt6np10g-tn4-r utt6np10l-s08-r utt6np10g-s08-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT6NP10 Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION 1SOP-8The UTC UTT6NP10 incorporates an N-channel MOSFET and a P-channel MOSFETit uses UTCs advanced technology to provide customers a minimum on-state resistance and high-speed switching, thereby enabling high-density mounting. The UTC UTT6NP10 is univers
Datasheet: UTT20N10 , UTT25N08 , UTT30N08 , UTT30N10 , UTT36N10 , UTT50N06 , UTT60N06 , UTT60N10 , SPP20N60C3 , UTT75N08 , UTT75N75 , UTT80N06 , UTT80N08 , UTT80N75 , UDN302 , UT2301 , UT2301Z .
History: SI8410DB | IPB80N06S2L-11 | AP30T10GK
Keywords - UTT6N10 MOSFET datasheet
UTT6N10 cross reference
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History: SI8410DB | IPB80N06S2L-11 | AP30T10GK



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