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UT2311 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UT2311
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.45 V
   Qgⓘ - Carga de la puerta: 8.5 nC
   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 485 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: SOT-23

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UT2311 Datasheet (PDF)

 ..1. Size:192K  utc
ut2311.pdf

UT2311
UT2311

UNISONIC TECHNOLOGIES CO., LTD UT2311 Power MOSFET 20V P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES * Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability with advanced technology of trench process SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3UT2311L-

 9.1. Size:155K  utc
ut2312.pdf

UT2311
UT2311

UNISONIC TECHNOLOGIES CO., LTD UT2312 Power MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 33 m @VGS = 4.5 V * RDS(ON) = 40 m @VGS = 2

 9.2. Size:199K  utc
ut2316.pdf

UT2311
UT2311

UNISONIC TECHNOLOGIES CO., LTD UT2316 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2316 is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switchingspeed, low on-resistance and favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

 9.3. Size:175K  utc
ut2316g-ae2-r ut2316g-ae3-r.pdf

UT2311
UT2311

UNISONIC TECHNOLOGIES CO., LTD UT2316 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2316 is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switchingspeed, low on-resistance and favorable stabilization. Used in commercial and industrial surface mountapplications and suited for low voltage applications such as DC/DC converters.

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