UT2311 MOSFET Datasheet: P-Ch, 20V, 4A. Full specification with pinout and replacement list

UT2311 Specs and Replacement

   Type Designator: UT2311
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 485 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT-23

UT2311 substitution

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UT2311 datasheet

..1. Size:192K utc
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UNISONIC TECHNOLOGIES CO., LTD UT2311 Power MOSFET 20V P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES * Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability with advanced technology of trench process SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 UT2311L-... See More ⇒

9.1. Size:155K utc
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UNISONIC TECHNOLOGIES CO., LTD UT2312 Power MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 33 m @VGS = 4.5 V * RDS(ON) = 40 m @VGS = 2... See More ⇒

9.2. Size:199K utc
ut2316.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD UT2316 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2316 is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance and favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. ... See More ⇒

9.3. Size:175K utc
ut2316g-ae2-r ut2316g-ae3-r.pdf pdf_icon