UT2311. Аналоги и основные параметры

Наименование производителя: UT2311

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 45 ns

Cossⓘ - Выходная емкость: 485 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm

Тип корпуса: SOT-23

Аналог (замена) для UT2311

- подборⓘ MOSFET транзистора по параметрам

 

UT2311 даташит

 ..1. Size:192K  utc
 ut2311.pdf pdf_icon

UT2311

UNISONIC TECHNOLOGIES CO., LTD UT2311 Power MOSFET 20V P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES * Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability with advanced technology of trench process SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 UT2311L-

 9.1. Size:155K  utc
 ut2312.pdf pdf_icon

UT2311

UNISONIC TECHNOLOGIES CO., LTD UT2312 Power MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 33 m @VGS = 4.5 V * RDS(ON) = 40 m @VGS = 2

 9.2. Size:199K  utc
 ut2316.pdf pdf_icon

UT2311

UNISONIC TECHNOLOGIES CO., LTD UT2316 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2316 is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance and favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

 9.3. Size:175K  utc
 ut2316g-ae2-r ut2316g-ae3-r.pdf pdf_icon

UT2311

UNISONIC TECHNOLOGIES CO., LTD UT2316 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2316 is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance and favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... UTT80N06, UTT80N08, UTT80N75, UDN302, UT2301, UT2301Z, UT2305, UT2305A, IRFB3607, UT2321, UT2327, UT3419, UT6302, 90N02, UK3018, UK3019, UK3919