UTD452 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UTD452
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 55 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 315 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
Paquete / Cubierta: TO-251 TO-252
Búsqueda de reemplazo de UTD452 MOSFET
UTD452 Datasheet (PDF)
utd452.pdf

UNISONIC TECHNOLOGIES CO., LTD UTD452 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTD452 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)
utd454.pdf

UNISONIC TECHNOLOGIES CO., LTD UTD454 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTD454 is an N-channel enhancement MOSFETproviding perfect RDS(ON) and low gate charge with UTC advanced technology. The UTC UTD454 is intended for being used in PWM, load switching and general purpose applications. FEATURES * RDS(ON)
Otros transistores... UT45N03 , UT4800 , UT50N03 , UT6402 , UT75N02 , UT8205A , UTD351 , UTD410 , MMIS60R580P , UTM2054 , UTM2513 , UTN3055 , UTP45N02 , UTT200N02 , UP2003 , UT2309 , UT30P03 .
History: 19N10L-TQ2-R | PSMN4R1-30YLC | SVGP20500NL5 | SVS11N70FJHD2 | TK130F06K3 | UF640L-TF1-T | STP605D
History: 19N10L-TQ2-R | PSMN4R1-30YLC | SVGP20500NL5 | SVS11N70FJHD2 | TK130F06K3 | UF640L-TF1-T | STP605D



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