UTD452 Datasheet and Replacement
Type Designator: UTD452
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 315 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-251 TO-252
UTD452 substitution
UTD452 Datasheet (PDF)
utd452.pdf

UNISONIC TECHNOLOGIES CO., LTD UTD452 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTD452 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)
utd454.pdf

UNISONIC TECHNOLOGIES CO., LTD UTD454 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTD454 is an N-channel enhancement MOSFETproviding perfect RDS(ON) and low gate charge with UTC advanced technology. The UTC UTD454 is intended for being used in PWM, load switching and general purpose applications. FEATURES * RDS(ON)
Datasheet: UT45N03 , UT4800 , UT50N03 , UT6402 , UT75N02 , UT8205A , UTD351 , UTD410 , MMIS60R580P , UTM2054 , UTM2513 , UTN3055 , UTP45N02 , UTT200N02 , UP2003 , UT2309 , UT30P03 .
Keywords - UTD452 MOSFET datasheet
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