UTD452 MOSFET. Datasheet pdf. Equivalent
Type Designator: UTD452
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 25 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 55 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 13.5 nC
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 315 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm
Package: TO-251 TO-252
UTD452 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UTD452 Datasheet (PDF)
utd452.pdf
UNISONIC TECHNOLOGIES CO., LTD UTD452 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTD452 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)
utd454.pdf
UNISONIC TECHNOLOGIES CO., LTD UTD454 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTD454 is an N-channel enhancement MOSFETproviding perfect RDS(ON) and low gate charge with UTC advanced technology. The UTC UTD454 is intended for being used in PWM, load switching and general purpose applications. FEATURES * RDS(ON)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
