All MOSFET. UTD452 Datasheet

 

UTD452 Datasheet and Replacement


   Type Designator: UTD452
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-251 TO-252
 

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UTD452 Datasheet (PDF)

 ..1. Size:216K  utc
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UTD452

UNISONIC TECHNOLOGIES CO., LTD UTD452 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTD452 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

 9.1. Size:161K  utc
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UTD452

UNISONIC TECHNOLOGIES CO., LTD UTD454 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTD454 is an N-channel enhancement MOSFETproviding perfect RDS(ON) and low gate charge with UTC advanced technology. The UTC UTD454 is intended for being used in PWM, load switching and general purpose applications. FEATURES * RDS(ON)

Datasheet: UT45N03 , UT4800 , UT50N03 , UT6402 , UT75N02 , UT8205A , UTD351 , UTD410 , IRF830 , UTM2054 , UTM2513 , UTN3055 , UTP45N02 , UTT200N02 , UP2003 , UT2309 , UT30P03 .

History: WSR25N20 | BUK753R5-60E | IXFB72N55Q2 | AP2R403GMT-HF | SI4860DY | SIR788DP | IRL520NLPBF

Keywords - UTD452 MOSFET datasheet

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