UT100N03 Todos los transistores

 

UT100N03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UT100N03
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 800 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00305 Ohm
   Paquete / Cubierta: TO-220 TO-251 TO-252 TO-263

 Búsqueda de reemplazo de MOSFET UT100N03

 

Principales características: UT100N03

 ..1. Size:268K  utc
ut100n03.pdf pdf_icon

UT100N03

 0.1. Size:364K  utc
ut100n03l-ta3-t ut100n03g-ta3-t ut100n03l-tf3-t ut100n03g-tf3-t ut100n03l-tm3-t ut100n03g-tm3-t ut100n03l-tn3-r ut100n03g-tn3-r.pdf pdf_icon

UT100N03

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220F The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load 1 1 switch or in PWM applications. TO-252 TO-251 FEATURES 1 * RDS(ON)

 0.2. Size:261K  utc
ut100n03-q.pdf pdf_icon

UT100N03

UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3m @VGS=10 V * RDS(ON) = 8.0m @VGS=4.

 0.3. Size:364K  utc
ut100n03l-tnd-r ut100n03g-tnd-r ut100n03l-tq2-t ut100n03g-tq2-t ut100n03l-tq2-r ut100n03g-tq2-r ut100n03g-k08-5060-r.pdf pdf_icon

UT100N03

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220F The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load 1 1 switch or in PWM applications. TO-252 TO-251 FEATURES 1 * RDS(ON)

Otros transistores... UTT50P06 , UTT65P04 , UD4809 , UF1404 , UK1398 , UM6K31N , UMBF170 , UP672 , IRFP260 , UT100N03-Q , UT108N03 , UT110N03 , UT120N03 , UT136N03 , UT150N04 , UT20N03 , UT3006 .

 

 
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