Справочник MOSFET. UT100N03

 

UT100N03 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: UT100N03
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 800 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00305 Ohm
   Тип корпуса: TO-220 TO-251 TO-252 TO-263
     - подбор MOSFET транзистора по параметрам

 

UT100N03 Datasheet (PDF)

 ..1. Size:268K  utc
 ut100n03.pdf pdf_icon

UT100N03

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 11TO-220 TO-251 DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with 1low gate voltages. This device is suitable for use as a load 1switch or in PWM applications. TO-252TO-263 FEATURES * RDS(ON)= 5.3m

 0.1. Size:364K  utc
 ut100n03l-ta3-t ut100n03g-ta3-t ut100n03l-tf3-t ut100n03g-tf3-t ut100n03l-tm3-t ut100n03g-tm3-t ut100n03l-tn3-r ut100n03g-tn3-r.pdf pdf_icon

UT100N03

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220FThe UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load 11switch or in PWM applications. TO-252TO-251 FEATURES 1* RDS(ON)

 0.2. Size:261K  utc
 ut100n03-q.pdf pdf_icon

UT100N03

UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3m@VGS=10 V * RDS(ON) = 8.0m@VGS=4.

 0.3. Size:364K  utc
 ut100n03l-tnd-r ut100n03g-tnd-r ut100n03l-tq2-t ut100n03g-tq2-t ut100n03l-tq2-r ut100n03g-tq2-r ut100n03g-k08-5060-r.pdf pdf_icon

UT100N03

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220FThe UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load 11switch or in PWM applications. TO-252TO-251 FEATURES 1* RDS(ON)

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PHP45N03LT

 

 
Back to Top

 


 
.