UT100N03 MOSFET Datasheet: N-Ch, 30V, 100A. Full specification with pinout and replacement list

UT100N03 Specs and Replacement

Type Designator: UT100N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00305 Ohm

Package: TO-220 TO-251 TO-252 TO-263

UT100N03 substitution

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UT100N03 datasheet

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0.1. Size:364K utc
ut100n03l-ta3-t ut100n03g-ta3-t ut100n03l-tf3-t ut100n03g-tf3-t ut100n03l-tm3-t ut100n03g-tm3-t ut100n03l-tn3-r ut100n03g-tn3-r.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220F The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load 1 1 switch or in PWM applications. TO-252 TO-251 FEATURES 1 * RDS(ON) ... See More ⇒

0.2. Size:261K utc
ut100n03-q.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3m @VGS=10 V * RDS(ON) = 8.0m @VGS=4.... See More ⇒

0.3. Size:364K utc
ut100n03l-tnd-r ut100n03g-tnd-r ut100n03l-tq2-t ut100n03g-tq2-t ut100n03l-tq2-r ut100n03g-tq2-r ut100n03g-k08-5060-r.pdf pdf_icon