UTT108N03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UTT108N03
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 107 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 108 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 102 nS
Cossⓘ - Capacitancia de salida: 580 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
Encapsulados: TO-220
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UTT108N03 datasheet
utt100n08.pdf
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utt100p03.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT100P03 Preliminary Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT100P03 is suitable for low voltage an
utt10n10.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT10N10 Preliminary Power MOSFET 10A, 100V N-CHANNEL MOSFET DESCRIPTION The UTC UTT10N10 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commut
Otros transistores... UTD420, UTD436, UTD454, UTD484, UTF1404, UTL1426, UTM3023, UTT100N05, 75N75, UTT120N04, UTT150N03, UTT200N03, UTT20N06, UTT220N03, UTT30N06, UTT3205, UTT36N05
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