Справочник MOSFET. UTT108N03

 

UTT108N03 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: UTT108N03
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 107 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 108 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 56 nC
   trⓘ - Время нарастания: 102 ns
   Cossⓘ - Выходная емкость: 580 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0042 Ohm
   Тип корпуса: TO-220
     - подбор MOSFET транзистора по параметрам

 

UTT108N03 Datasheet (PDF)

 ..1. Size:174K  utc
utt108n03.pdfpdf_icon

UTT108N03

UNISONIC TECHNOLOGIES CO., LTD UTT108N03 Power MOSFET 30V, 108A N-CHANNEL POWER MOSFET DESCRIPTION As advanced N-channel level power MOSFET, the UTT108N03is produced using UTCs advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain1low gate charge for superior switching performance. TO-220 FEATURES * RDS(ON) = 6.0m

 9.1. Size:123K  utc
utt100n08.pdfpdf_icon

UTT108N03

UNISONIC TECHNOLOGIES CO., LTD UTT100N08 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N08 is an N-channel enhancement mode Power FET using UTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation

 9.2. Size:126K  utc
utt100p03.pdfpdf_icon

UTT108N03

UNISONIC TECHNOLOGIES CO., LTD UTT100P03 Preliminary Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT100P03 is suitable for low voltage an

 9.3. Size:148K  utc
utt10n10.pdfpdf_icon

UTT108N03

UNISONIC TECHNOLOGIES CO., LTD UTT10N10 Preliminary Power MOSFET 10A, 100V N-CHANNEL MOSFET DESCRIPTION The UTC UTT10N10 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide thecustomers with a minimum on-state resistance, high switching speedand ultra low gate charge. It also can withstand high energy pulse in the avalanche and commut

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