All MOSFET. UTT108N03 Datasheet

 

UTT108N03 Datasheet and Replacement


   Type Designator: UTT108N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 108 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 102 nS
   Cossⓘ - Output Capacitance: 580 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO-220
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UTT108N03 Datasheet (PDF)

 ..1. Size:174K  utc
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UTT108N03

UNISONIC TECHNOLOGIES CO., LTD UTT108N03 Power MOSFET 30V, 108A N-CHANNEL POWER MOSFET DESCRIPTION As advanced N-channel level power MOSFET, the UTT108N03is produced using UTCs advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain1low gate charge for superior switching performance. TO-220 FEATURES * RDS(ON) = 6.0m

 9.1. Size:123K  utc
utt100n08.pdf pdf_icon

UTT108N03

UNISONIC TECHNOLOGIES CO., LTD UTT100N08 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N08 is an N-channel enhancement mode Power FET using UTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation

 9.2. Size:126K  utc
utt100p03.pdf pdf_icon

UTT108N03

UNISONIC TECHNOLOGIES CO., LTD UTT100P03 Preliminary Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT100P03 is suitable for low voltage an

 9.3. Size:148K  utc
utt10n10.pdf pdf_icon

UTT108N03

UNISONIC TECHNOLOGIES CO., LTD UTT10N10 Preliminary Power MOSFET 10A, 100V N-CHANNEL MOSFET DESCRIPTION The UTC UTT10N10 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide thecustomers with a minimum on-state resistance, high switching speedand ultra low gate charge. It also can withstand high energy pulse in the avalanche and commut

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXFR24N100Q3 | IPB080N03L | DSK9J01 | NCE40H11 | SL12N100T | FDD8750 | SSF10N60

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