UM6K1N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: UM6K1N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 9 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: SOT-363

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UM6K1N Datasheet (PDF)

..1. Size:107K rohm
um6k1n k1 sot363.pdf

TransistorSmall switching (30V, 0.1A)UM6K1NFFeatures FExternal dimensions (Units: mm)1) Two 2SK3018 transistors in a singleUMT package.2) The MOSFET elements are inde-pendent, eliminating interference.3) Mounting cost and area can be cutin half.4) Low on-resistance.5) Low voltage drive (2.5V) makes thisdevice ideal for portable equipment.FApplicationsInterfacing, swi

..2. Size:70K rohm
um6k1n.pdf

UM6K1N Transistors 2.5V Drive Nch+Nch MOS FET UM6K1N Structure External dimensions (Unit : mm) Silicon N-channel MOS FET UMT62.0 1.3 0.90.65 0.65 0.7 Features (5)(4)(6)1) Two 2SK3018 transistors in a single UMT package. 2) The MOS FET elements are independent, eliminating (1) (3)1pin markmutual interference. (2)0.2 0.153) Mounting cost and area can be

..3. Size:181K utc
um6k1n.pdf

UNISONIC TECHNOLOGIES CO., LTD UM6K1N Preliminary Power MOSFET SILICON N-CHANNEL MOSFET DESCRIPTION The UTC UM6K1N is a silicon N-channel MOSFET. it uses UTCs advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate threshold voltage. The UTC UM6K1N is suitable for switching and interfacingapplications. F

..4. Size:2092K jiangsu
um6k1n.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETsUM6K1N Dual N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 8@4V30V100mA13@2.5VFEATURE 1) Two 2SK3018 transistors in a package. 2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half. 4) Low On-resistance. 5)

0.1. Size:368K secos
sum6k1n.pdf

SUM6K1N 0.15 W, 100 mA, 30 V Plastic Encapsulated Elektronische Bauelemente Dual N-channel MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Transistor elements independent, eliminating interference

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