TransistorSmall switching (30V, 0.1A)UM6K1NFFeatures FExternal dimensions (Units: mm)1) Two 2SK3018 transistors in a singleUMT package.2) The MOSFET elements are inde-pendent, eliminating interference.3) Mounting cost and area can be cutin half.4) Low on-resistance.5) Low voltage drive (2.5V) makes thisdevice ideal for portable equipment.FApplicationsInterfacing, swi

UM6K1N Transistors 2.5V Drive Nch+Nch MOS FET UM6K1N Structure External dimensions (Unit : mm) Silicon N-channel MOS FET UMT62.0 1.3 0.90.65 0.65 0.7 Features (5)(4)(6)1) Two 2SK3018 transistors in a single UMT package. 2) The MOS FET elements are independent, eliminating (1) (3)1pin markmutual interference. (2)0.2 0.153) Mounting cost and area can be

UNISONIC TECHNOLOGIES CO., LTD UM6K1N Preliminary Power MOSFET SILICON N-CHANNEL MOSFET DESCRIPTION The UTC UM6K1N is a silicon N-channel MOSFET. it uses UTCs advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate threshold voltage. The UTC UM6K1N is suitable for switching and interfacingapplications. F

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETsUM6K1N Dual N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 8@4V30V100mA13@2.5VFEATURE 1) Two 2SK3018 transistors in a package. 2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half. 4) Low On-resistance. 5)

SUM6K1N 0.15 W, 100 mA, 30 V Plastic Encapsulated Elektronische Bauelemente Dual N-channel MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Transistor elements independent, eliminating interference