UM6K1N Specs and Replacement

Type Designator: UM6K1N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: SOT-363

UM6K1N substitution

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UM6K1N datasheet

 ..1. Size:107K  rohm
 um6k1n k1 sot363.pdf pdf_icon

UM6K1N

Transistor Small switching (30V, 0.1A) UM6K1N FFeatures FExternal dimensions (Units mm) 1) Two 2SK3018 transistors in a single UMT package. 2) The MOSFET elements are inde- pendent, eliminating interference. 3) Mounting cost and area can be cut in half. 4) Low on-resistance. 5) Low voltage drive (2.5V) makes this device ideal for portable equipment. FApplications Interfacing, swi... See More ⇒

 ..2. Size:70K  rohm
 um6k1n.pdf pdf_icon

UM6K1N

UM6K1N Transistors 2.5V Drive Nch+Nch MOS FET UM6K1N Structure External dimensions (Unit mm) Silicon N-channel MOS FET UMT6 2.0 1.3 0.9 0.65 0.65 0.7 Features (5) (4) (6) 1) Two 2SK3018 transistors in a single UMT package. 2) The MOS FET elements are independent, eliminating (1) (3) 1pin mark mutual interference. (2) 0.2 0.15 3) Mounting cost and area can be... See More ⇒

 ..3. Size:181K  utc
 um6k1n.pdf pdf_icon

UM6K1N

UNISONIC TECHNOLOGIES CO., LTD UM6K1N Preliminary Power MOSFET SILICON N-CHANNEL MOSFET DESCRIPTION The UTC UM6K1N is a silicon N-channel MOSFET. it uses UTC s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate threshold voltage. The UTC UM6K1N is suitable for switching and interfacing applications. F... See More ⇒

 ..4. Size:2092K  jiangsu
 um6k1n.pdf pdf_icon

UM6K1N

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs UM6K1N Dual N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 8 @4V 30V 100mA 13 @2.5V FEATURE 1) Two 2SK3018 transistors in a package. 2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half. 4) Low On-resistance. 5)... See More ⇒

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Detailed specifications: TF218, K4059, 2SK2751, UJ0100, 10NN15, 12NN10, 2N7002ZDW, UD9926, IRF3205, UP9971, UT4232, UT4812, UT4812Z, UT4822, UT4957, UT6898, UT7317

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