MTB030N04N3 Todos los transistores

 

MTB030N04N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB030N04N3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 8 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 15.8 nS

Conductancia de drenaje-sustrato (Cd): 36 pF

Resistencia drenaje-fuente RDS(on): 0.0253 Ohm

Empaquetado / Estuche: SOT-23

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MTB030N04N3 Datasheet (PDF)

1.1. mtb030n04n3.pdf Size:625K _cystek

MTB030N04N3
MTB030N04N3

Spec. No. : C884N3 Issued Date : 2014.08.20 CYStech Electronics Corp. Revised Date : Page No. : 1/ 9 40V N-Channel Enhancement Mode MOSFET BVDSS 40V MTB030N04N3 ID @VGS=10V 8A VGS=10V, ID=7.9A 25.3mΩ RDSON(TYP) VGS=4.5V, ID=7.3A 34.2mΩ Features • Low on-resistance • Low voltage gate drive • Excellent thermal and electrical capabilities • Pb-free l

5.1. mtb032p06v8.pdf Size:655K _cystek

MTB030N04N3
MTB030N04N3

Spec. No. : C924V8 Issued Date : 2013.06.06 CYStech Electronics Corp. Revised Date : 2014.08.11 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -60V MTB032P06V8 ID -25A RDSON@VGS=10V, ID=-6A 29mΩ(typ) RDSON@VGS=-4.5V, ID=-4A 33mΩ(typ) Description The MTB032P06V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of

5.2. mtb03n03h8.pdf Size:221K _cystek

MTB030N04N3
MTB030N04N3

Spec. No. : C788H8 Issued Date : 2010.09.23 CYStech Electronics Corp. Revised Date : 2010.10.06 Page No. : 1/7 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB03N03H8 ID 75A RDSON(max) 3mΩ Description The MTB03N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

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