MTB030N04N3 Specs and Replacement

Type Designator: MTB030N04N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15.8 nS

Cossⓘ - Output Capacitance: 36 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0253 Ohm

Package: SOT-23

MTB030N04N3 substitution

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MTB030N04N3 datasheet

 ..1. Size:625K  cystek
 mtb030n04n3.pdf pdf_icon

MTB030N04N3

Spec. No. C884N3 Issued Date 2014.08.20 CYStech Electronics Corp. Revised Date Page No. 1/ 9 40V N-Channel Enhancement Mode MOSFET BVDSS 40V MTB030N04N3 ID @VGS=10V 8A VGS=10V, ID=7.9A 25.3m RDSON(TYP) VGS=4.5V, ID=7.3A 34.2m Features Low on-resistance Low voltage gate drive Excellent thermal and electrical capabilities Pb-free l... See More ⇒

 7.1. Size:477K  cystek
 mtb030n10rq8.pdf pdf_icon

MTB030N04N3

Spec. No. C053Q8 Issued Date 2016.11.04 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET MTB030N10RQ8 BVDSS 100V ID @ TA=25 C, VGS=10V 6.2A RDS(ON)@VGS=10V, ID=10A 22.7 m (typ) Features RDS(ON)@VGS=4.5V, ID=8A 27.5 m (typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic Rep... See More ⇒

 9.1. Size:221K  cystek
 mtb03n03h8.pdf pdf_icon

MTB030N04N3

Spec. No. C788H8 Issued Date 2010.09.23 CYStech Electronics Corp. Revised Date 2010.10.06 Page No. 1/7 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB03N03H8 ID 75A RDSON(max) 3m Description The MTB03N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r... See More ⇒

 9.2. Size:655K  cystek
 mtb032p06v8.pdf pdf_icon

MTB030N04N3

Spec. No. C924V8 Issued Date 2013.06.06 CYStech Electronics Corp. Revised Date 2014.08.11 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -60V MTB032P06V8 ID -25A RDSON@VGS=10V, ID=-6A 29m (typ) RDSON@VGS=-4.5V, ID=-4A 33m (typ) Description The MTB032P06V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of ... See More ⇒

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Detailed specifications: MTA340N02N3, MTA55N02N3, MTA65N15H8, MTA65N20H8, MTA90N03ZN3, MTB02N03H8, MTB02N03J3, MTB02N03Q8, 60N06, MTB032P06V8, MTB03N03H8, MTB04N03AQ8, MTB04N03E3, MTB04N03H8, MTB04N03J3, MTB04N03Q8, MTB050N15J3

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