MTB050P10E3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB050P10E3

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16.4 nS

Cossⓘ - Capacitancia de salida: 227 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.046 Ohm

Encapsulados: TO-220

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MTB050P10E3 datasheet

 ..1. Size:270K  cystek
 mtb050p10e3.pdf pdf_icon

MTB050P10E3

Spec. No. C975E3 Issued Date 2014.07.10 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB050P10E3 ID @ VGS=-10V -40A 46m RDSON(TYP) @ VGS=-10V, ID=-20A RDSON(TYP) @ VGS=-4.5V, ID=-15A 52m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching

 5.1. Size:525K  cystek
 mtb050p10f3.pdf pdf_icon

MTB050P10E3

Spec. No. C975F3 Issued Date 2014.08.13 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB050P10F3 ID @ VGS=-10V -40A RDSON(TYP) @ VGS=-10V, ID=-20A 46m RDSON(TYP) @ VGS=-4.5V, ID=-15A 52m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching

 8.1. Size:550K  cystek
 mtb050n15j3.pdf pdf_icon

MTB050P10E3

Spec. No. C979J3 Issued Date 2014.08.14 CYStech Electronics Corp. Revised Date 2014.08.18 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 150V MTB050N15J3 ID @VGS=10V 20A RDS(ON)@VGS=10V, ID=15A 47.5m (typ) RDS(ON)@VGS=4.5V, ID=10A 47.5m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free p

 9.1. Size:362K  cystek
 mtb05n03hq8.pdf pdf_icon

MTB050P10E3

Spec. No. C738Q8 Issued Date 2009.08.19 CYStech Electronics Corp. Revised Date 2011.10.03 Page No. 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB05N03HQ8 ID 20A RDSON(max) 5m Description The MTB05N03HQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

MOSTRAR MÁS

Otros transistores... MTB032P06V8, MTB03N03H8, MTB04N03AQ8, MTB04N03E3, MTB04N03H8, MTB04N03J3, MTB04N03Q8, MTB050N15J3, IRF540N, MTB050P10F3, MTB05N03HQ8, MTB060N06I3, MTB060N15J3, MTB06N03E3, MTB06N03H8, MTB06N03I3, MTB06N03J3