All MOSFET. MTB050P10E3 Datasheet

 

MTB050P10E3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTB050P10E3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Maximum Power Dissipation (Pd): 200 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Drain Current |Id|: 40 A
   Maximum Junction Temperature (Tj): 175 °C
   Rise Time (tr): 16.4 nS
   Drain-Source Capacitance (Cd): 227 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.046 Ohm
   Package: TO-220

 MTB050P10E3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTB050P10E3 Datasheet (PDF)

 ..1. Size:270K  cystek
mtb050p10e3.pdf

MTB050P10E3 MTB050P10E3

Spec. No. : C975E3 Issued Date : 2014.07.10 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -100VMTB050P10E3 ID @ VGS=-10V -40A46m RDSON(TYP) @ VGS=-10V, ID=-20A RDSON(TYP) @ VGS=-4.5V, ID=-15A 52m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching

 5.1. Size:525K  cystek
mtb050p10f3.pdf

MTB050P10E3 MTB050P10E3

Spec. No. : C975F3 Issued Date : 2014.08.13 CYStech Electronics Corp. Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB050P10F3 ID @ VGS=-10V -40A RDSON(TYP) @ VGS=-10V, ID=-20A 46m RDSON(TYP) @ VGS=-4.5V, ID=-15A 52m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching

 8.1. Size:550K  cystek
mtb050n15j3.pdf

MTB050P10E3 MTB050P10E3

Spec. No. : C979J3 Issued Date : 2014.08.14 CYStech Electronics Corp. Revised Date : 2014.08.18 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 150V MTB050N15J3 ID @VGS=10V 20A RDS(ON)@VGS=10V, ID=15A 47.5m(typ) RDS(ON)@VGS=4.5V, ID=10A 47.5m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free p

 9.1. Size:362K  cystek
mtb05n03hq8.pdf

MTB050P10E3 MTB050P10E3

Spec. No. : C738Q8 Issued Date : 2009.08.19 CYStech Electronics Corp.Revised Date : 2011.10.03 Page No. : 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB05N03HQ8ID 20ARDSON(max) 5m Description The MTB05N03HQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

Datasheet: MTB032P06V8 , MTB03N03H8 , MTB04N03AQ8 , MTB04N03E3 , MTB04N03H8 , MTB04N03J3 , MTB04N03Q8 , MTB050N15J3 , IRF540 , MTB050P10F3 , MTB05N03HQ8 , MTB060N06I3 , MTB060N15J3 , MTB06N03E3 , MTB06N03H8 , MTB06N03I3 , MTB06N03J3 .

 

 
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