MTB050P10E3 - Даташиты. Аналоги. Основные параметры
Наименование производителя: MTB050P10E3
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 200 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 16.4 ns
Cossⓘ - Выходная емкость: 227 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.046 Ohm
Тип корпуса: TO-220
Аналог (замена) для MTB050P10E3
MTB050P10E3 Datasheet (PDF)
mtb050p10e3.pdf

Spec. No. : C975E3 Issued Date : 2014.07.10 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -100VMTB050P10E3 ID @ VGS=-10V -40A46m RDSON(TYP) @ VGS=-10V, ID=-20A RDSON(TYP) @ VGS=-4.5V, ID=-15A 52m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching
mtb050p10f3.pdf

Spec. No. : C975F3 Issued Date : 2014.08.13 CYStech Electronics Corp. Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB050P10F3 ID @ VGS=-10V -40A RDSON(TYP) @ VGS=-10V, ID=-20A 46m RDSON(TYP) @ VGS=-4.5V, ID=-15A 52m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching
mtb050n15j3.pdf

Spec. No. : C979J3 Issued Date : 2014.08.14 CYStech Electronics Corp. Revised Date : 2014.08.18 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 150V MTB050N15J3 ID @VGS=10V 20A RDS(ON)@VGS=10V, ID=15A 47.5m(typ) RDS(ON)@VGS=4.5V, ID=10A 47.5m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free p
mtb05n03hq8.pdf

Spec. No. : C738Q8 Issued Date : 2009.08.19 CYStech Electronics Corp.Revised Date : 2011.10.03 Page No. : 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB05N03HQ8ID 20ARDSON(max) 5m Description The MTB05N03HQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on
Другие MOSFET... MTB032P06V8 , MTB03N03H8 , MTB04N03AQ8 , MTB04N03E3 , MTB04N03H8 , MTB04N03J3 , MTB04N03Q8 , MTB050N15J3 , IRF540N , MTB050P10F3 , MTB05N03HQ8 , MTB060N06I3 , MTB060N15J3 , MTB06N03E3 , MTB06N03H8 , MTB06N03I3 , MTB06N03J3 .
History: BUZ305 | APT50M65B2LLG | JCS7N60F | TMD4N60 | AP40T10GI-HF | ASDM40N52E-R | SSF65R190SFD
History: BUZ305 | APT50M65B2LLG | JCS7N60F | TMD4N60 | AP40T10GI-HF | ASDM40N52E-R | SSF65R190SFD



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