MTB09N06Q8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB09N06Q8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 285 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0073 Ohm

Encapsulados: SOP-8

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MTB09N06Q8 datasheet

 ..1. Size:564K  cystek
 mtb09n06q8.pdf pdf_icon

MTB09N06Q8

Spec. No. C912Q8 Issued Date 2014.07.24 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB09N06Q8 ID @VGS=10V 18A RDSON@VGS=10V, ID=12A 7.3m (typ) RDSON@VGS=4.5V, ID=10A 8.4m (typ) Features Single Drive Requirement Fast Switching Characteristic Low RDS(ON) Pb-free lead plating and ha

 6.1. Size:589K  cystek
 mtb09n06j3.pdf pdf_icon

MTB09N06Q8

Spec. No. C912J3 Issued Date 2013.07.24 CYStech Electronics Corp. Revised Date 2014.07.24 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB09N06J3 ID 50A RDS(ON)@VGS=10V, ID=20A 6.3 m (typ) RDS(ON)@VGS=4.5V, ID=20A 9 m (typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristi

 7.1. Size:343K  cystek
 mtb09n04h8.pdf pdf_icon

MTB09N06Q8

Spec. No. C892H8 Issued Date 2013.02.01 CYStech Electronics Corp. Revised Date Page No. 1/10 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 40V MTB09N04H8 ID 60A 6m VGS=10V, ID=10A RDSON(TYP) 10m VGS=4.5V, ID=8A Description The MTB09N04H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching

 7.2. Size:332K  cystek
 mtb09n03h8.pdf pdf_icon

MTB09N06Q8

Spec. No. C709H8 Issued Date 2009.05.07 CYStech Electronics Corp. Revised Date 2012.11.12 Page No. 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB09N03H8 ID 56A RDS(ON)@VGS=10V, ID=25A 7 m (typ) RDS(ON)@VGS=4.5V, ID=20A 13 m (typ) Description The MTB09N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combin

MOSTRAR MÁS

Otros transistores... MTB070N11J3, MTB08N04J3, MTB090N06I3, MTB090N06N3, MTB09N03H8, MTB09N03V8, MTB09N04H8, MTB09N06J3, 8205A, MTB09P03J3, MTB110P10E3, MTB110P10F3, MTB110P10J3, MTB11N03Q8, MTB12N03J3, MTB12N03Q8, MTB12N04J3