Справочник MOSFET. MTB09N06Q8

 

MTB09N06Q8 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MTB09N06Q8
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 285 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0073 Ohm
   Тип корпуса: SOP-8

 Аналог (замена) для MTB09N06Q8

 

 

MTB09N06Q8 Datasheet (PDF)

 ..1. Size:564K  cystek
 mtb09n06q8.pdf

MTB09N06Q8 MTB09N06Q8

Spec. No. : C912Q8 Issued Date : 2014.07.24 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB09N06Q8 ID @VGS=10V 18A RDSON@VGS=10V, ID=12A 7.3m(typ) RDSON@VGS=4.5V, ID=10A 8.4m(typ) Features Single Drive Requirement Fast Switching Characteristic Low RDS(ON) Pb-free lead plating and ha

 6.1. Size:589K  cystek
 mtb09n06j3.pdf

MTB09N06Q8 MTB09N06Q8

Spec. No. : C912J3 Issued Date : 2013.07.24 CYStech Electronics Corp. Revised Date : 2014.07.24 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB09N06J3 ID 50A RDS(ON)@VGS=10V, ID=20A 6.3 m(typ) RDS(ON)@VGS=4.5V, ID=20A 9 m(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristi

 7.1. Size:343K  cystek
 mtb09n04h8.pdf

MTB09N06Q8 MTB09N06Q8

Spec. No. : C892H8 Issued Date : 2013.02.01 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 40VMTB09N04H8ID 60A6m VGS=10V, ID=10A RDSON(TYP) 10m VGS=4.5V, ID=8A Description The MTB09N04H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching

 7.2. Size:332K  cystek
 mtb09n03h8.pdf

MTB09N06Q8 MTB09N06Q8

Spec. No. : C709H8 Issued Date : 2009.05.07 CYStech Electronics Corp.Revised Date : 2012.11.12 Page No. : 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB09N03H8ID 56ARDS(ON)@VGS=10V, ID=25A 7 m(typ) RDS(ON)@VGS=4.5V, ID=20A 13 m(typ) Description The MTB09N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combin

 7.3. Size:327K  cystek
 mtb09n03v8.pdf

MTB09N06Q8 MTB09N06Q8

Spec. No. : C709V8 Issued Date : 2012.08.20 CYStech Electronics Corp.Revised Date : 2012.08.23 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB09N03V8ID 37.5A6.8m VGS=10V, ID=12A RDSON(TYP) 13.1m VGS=4.5V, ID=8A Description The MTB09N03V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination o

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top