All MOSFET. MTB09N06Q8 Datasheet

 

MTB09N06Q8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTB09N06Q8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 36.8 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 285 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0073 Ohm
   Package: SOP-8

 MTB09N06Q8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTB09N06Q8 Datasheet (PDF)

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 mtb09n06q8.pdf

MTB09N06Q8 MTB09N06Q8

Spec. No. : C912Q8 Issued Date : 2014.07.24 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB09N06Q8 ID @VGS=10V 18A RDSON@VGS=10V, ID=12A 7.3m(typ) RDSON@VGS=4.5V, ID=10A 8.4m(typ) Features Single Drive Requirement Fast Switching Characteristic Low RDS(ON) Pb-free lead plating and ha

 6.1. Size:589K  cystek
 mtb09n06j3.pdf

MTB09N06Q8 MTB09N06Q8

Spec. No. : C912J3 Issued Date : 2013.07.24 CYStech Electronics Corp. Revised Date : 2014.07.24 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB09N06J3 ID 50A RDS(ON)@VGS=10V, ID=20A 6.3 m(typ) RDS(ON)@VGS=4.5V, ID=20A 9 m(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristi

 7.1. Size:343K  cystek
 mtb09n04h8.pdf

MTB09N06Q8 MTB09N06Q8

Spec. No. : C892H8 Issued Date : 2013.02.01 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 40VMTB09N04H8ID 60A6m VGS=10V, ID=10A RDSON(TYP) 10m VGS=4.5V, ID=8A Description The MTB09N04H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching

 7.2. Size:332K  cystek
 mtb09n03h8.pdf

MTB09N06Q8 MTB09N06Q8

Spec. No. : C709H8 Issued Date : 2009.05.07 CYStech Electronics Corp.Revised Date : 2012.11.12 Page No. : 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB09N03H8ID 56ARDS(ON)@VGS=10V, ID=25A 7 m(typ) RDS(ON)@VGS=4.5V, ID=20A 13 m(typ) Description The MTB09N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combin

 7.3. Size:327K  cystek
 mtb09n03v8.pdf

MTB09N06Q8 MTB09N06Q8

Spec. No. : C709V8 Issued Date : 2012.08.20 CYStech Electronics Corp.Revised Date : 2012.08.23 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB09N03V8ID 37.5A6.8m VGS=10V, ID=12A RDSON(TYP) 13.1m VGS=4.5V, ID=8A Description The MTB09N03V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination o

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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