MTB110P10F3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB110P10F3

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18.2 nS

Cossⓘ - Capacitancia de salida: 104 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: TO-263

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MTB110P10F3 datasheet

 ..1. Size:525K  cystek
 mtb110p10f3.pdf pdf_icon

MTB110P10F3

Spec. No. C968F3 Issued Date 2014.08.05 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB110P10F3 ID @ VGS=-10V -23A RDSON(TYP) @ VGS=-10V, ID=-11A 80m RDSON(TYP) @ VGS=-4.5V, ID=-8A 93m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching

 5.1. Size:595K  cystek
 mtb110p10j3.pdf pdf_icon

MTB110P10F3

Spec. No. C968J3 Issued Date 2014.08.07 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -100V MTB110P10J3 ID -14A RDS(ON)@VGS=-10V, ID=-4.5A 79m (typ) RDS(ON)@VGS=-4.5V, ID=-4A 90m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & halogen-free package

 5.2. Size:345K  cystek
 mtb110p10l3.pdf pdf_icon

MTB110P10F3

Spec. No. C968L3 Issued Date 2014.12.23 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB110P10L3 ID@VGS=-10V, TA=25 C -3.8A ID@VGS=-10V, TC=25 C -10.8A 85m (typ.) RDSON@VGS=-10V, ID=-4.5A Features 96m (typ.) RDSON@VGS=-4.5V, ID=-4A Simple Drive Requirement Low On-resistance F

 5.3. Size:518K  cystek
 mtb110p10e3.pdf pdf_icon

MTB110P10F3

Spec. No. C968E3 Issued Date 2014.08.04 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB110P10E3 ID @ VGS=-10V -23A RDSON(TYP) @ VGS=-10V, ID=-11A 80m RDSON(TYP) @ VGS=-4.5V, ID=-8A 93m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching

MOSTRAR MÁS

Otros transistores... MTB090N06N3, MTB09N03H8, MTB09N03V8, MTB09N04H8, MTB09N06J3, MTB09N06Q8, MTB09P03J3, MTB110P10E3, IRF630, MTB110P10J3, MTB11N03Q8, MTB12N03J3, MTB12N03Q8, MTB12N04J3, MTB12P04J3, MTB12P06J3, MTB13N03Q8