All MOSFET. MTB110P10F3 Datasheet

 

MTB110P10F3 Datasheet and Replacement


   Type Designator: MTB110P10F3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18.2 nS
   Cossⓘ - Output Capacitance: 104 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO-263
 

 MTB110P10F3 substitution

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MTB110P10F3 Datasheet (PDF)

 ..1. Size:525K  cystek
 mtb110p10f3.pdf pdf_icon

MTB110P10F3

Spec. No. : C968F3 Issued Date : 2014.08.05 CYStech Electronics Corp. Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB110P10F3 ID @ VGS=-10V -23A RDSON(TYP) @ VGS=-10V, ID=-11A 80m RDSON(TYP) @ VGS=-4.5V, ID=-8A 93m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching

 5.1. Size:595K  cystek
 mtb110p10j3.pdf pdf_icon

MTB110P10F3

Spec. No. : C968J3 Issued Date : 2014.08.07 CYStech Electronics Corp. Revised Date : Page No. : 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -100V MTB110P10J3 ID -14A RDS(ON)@VGS=-10V, ID=-4.5A 79m(typ) RDS(ON)@VGS=-4.5V, ID=-4A 90m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & halogen-free package

 5.2. Size:345K  cystek
 mtb110p10l3.pdf pdf_icon

MTB110P10F3

Spec. No. : C968L3 Issued Date : 2014.12.23 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -100VMTB110P10L3 ID@VGS=-10V, TA=25C -3.8A ID@VGS=-10V, TC=25C -10.8A 85m (typ.)RDSON@VGS=-10V, ID=-4.5A Features 96m (typ.)RDSON@VGS=-4.5V, ID=-4A Simple Drive Requirement Low On-resistance F

 5.3. Size:518K  cystek
 mtb110p10e3.pdf pdf_icon

MTB110P10F3

Spec. No. : C968E3 Issued Date : 2014.08.04 CYStech Electronics Corp. Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB110P10E3 ID @ VGS=-10V -23A RDSON(TYP) @ VGS=-10V, ID=-11A 80m RDSON(TYP) @ VGS=-4.5V, ID=-8A 93m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching

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Datasheet: MTB090N06N3 , MTB09N03H8 , MTB09N03V8 , MTB09N04H8 , MTB09N06J3 , MTB09N06Q8 , MTB09P03J3 , MTB110P10E3 , IRF9540 , MTB110P10J3 , MTB11N03Q8 , MTB12N03J3 , MTB12N03Q8 , MTB12N04J3 , MTB12P04J3 , MTB12P06J3 , MTB13N03Q8 .

Keywords - MTB110P10F3 MOSFET datasheet

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