All MOSFET. MTB110P10F3 Datasheet

 

MTB110P10F3 MOSFET. Datasheet pdf. Equivalent

Type Designator: MTB110P10F3

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 140 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 23 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 18.2 nS

Drain-Source Capacitance (Cd): 104 pF

Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm

Package: TO-263

MTB110P10F3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTB110P10F3 Datasheet (PDF)

1.1. mtb110p10l3.pdf Size:345K _upd-mosfet

MTB110P10F3
MTB110P10F3

Spec. No. : C968L3 Issued Date : 2014.12.23 CYStech Electronics Corp. Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB110P10L3 ID@VGS=-10V, TA=25°C -3.8A ID@VGS=-10V, TC=25°C -10.8A 85mΩ (typ.) RDSON@VGS=-10V, ID=-4.5A Features 96mΩ (typ.) RDSON@VGS=-4.5V, ID=-4A • Simple Drive Requirement • Low On-resistance • F

1.2. mtb110p10e3.pdf Size:518K _cystek

MTB110P10F3
MTB110P10F3

Spec. No. : C968E3 Issued Date : 2014.08.04 CYStech Electronics Corp. Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB110P10E3 ID @ VGS=-10V -23A RDSON(TYP) @ VGS=-10V, ID=-11A 80mΩ RDSON(TYP) @ VGS=-4.5V, ID=-8A 93mΩ Features  Low Gate Charge  Simple Drive Requirement  Repetitive Avalanche Rated  Fast Switching

 1.3. mtb110p10f3.pdf Size:525K _cystek

MTB110P10F3
MTB110P10F3

Spec. No. : C968F3 Issued Date : 2014.08.05 CYStech Electronics Corp. Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB110P10F3 ID @ VGS=-10V -23A RDSON(TYP) @ VGS=-10V, ID=-11A 80mΩ RDSON(TYP) @ VGS=-4.5V, ID=-8A 93mΩ Features  Low Gate Charge  Simple Drive Requirement  Repetitive Avalanche Rated  Fast Switching

1.4. mtb110p10j3.pdf Size:595K _cystek

MTB110P10F3
MTB110P10F3

Spec. No. : C968J3 Issued Date : 2014.08.07 CYStech Electronics Corp. Revised Date : Page No. : 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -100V MTB110P10J3 ID -14A RDS(ON)@VGS=-10V, ID=-4.5A 79mΩ(typ) RDS(ON)@VGS=-4.5V, ID=-4A 90mΩ(typ) Features  Low Gate Charge  Simple Drive Requirement  Pb-free lead plating & halogen-free package

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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