MTB15P04J3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB15P04J3

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 69 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 325 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0097 Ohm

Encapsulados: TO-252

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MTB15P04J3 datasheet

 ..1. Size:307K  cystek
 mtb15p04j3.pdf pdf_icon

MTB15P04J3

Spec. No. C877J3 Issued Date 2012.09.26 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -40V MTB15P04J3 ID -50A RDS(ON)@VGS=-10V, ID=-25A 9.7m (typ) RDS(ON)@VGS=-4.5V, ID=-15A 12.7m (typ) Features Single Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead

 9.1. Size:202K  motorola
 mtb15n06e.pdf pdf_icon

MTB15P04J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB15N06E/D Designer's Data Sheet MTB15N06E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 15 AMPERES RDS(on) = 0.12 OHM The D2PAK package has the capability of housing a larger die 60 VOLTS than any existing surface mo

 9.2. Size:231K  motorola
 mtb15n06erev1.pdf pdf_icon

MTB15P04J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB15N06E/D Designer's Data Sheet MTB15N06E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 15 AMPERES RDS(on) = 0.12 OHM The D2PAK package has the capability of housing a larger die 60 VOLTS than any existing surface mo

 9.3. Size:274K  motorola
 mtb15n06v.pdf pdf_icon

MTB15P04J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB15N06V/D Designer's Data Sheet MTB15N06V TMOS V Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 15 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.12 OHM area product about one half that of standard

MOSTRAR MÁS

Otros transistores... MTB12N03J3, MTB12N03Q8, MTB12N04J3, MTB12P04J3, MTB12P06J3, MTB13N03Q8, MTB14A03V8, MTB14P03Q8, IRFP260, MTB16P04J3, MTB17A03Q8, MTB17A03V8, MTB17N03Q8, MTB1D7N03ATH8, MTB1D7N03E3, MTB1K6N06KS6R, MTB20A03Q8