MTB15P04J3 Todos los transistores

 

MTB15P04J3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTB15P04J3
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 69 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 325 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0097 Ohm
   Paquete / Cubierta: TO-252
 

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MTB15P04J3 Datasheet (PDF)

 ..1. Size:307K  cystek
 mtb15p04j3.pdf pdf_icon

MTB15P04J3

Spec. No. : C877J3 Issued Date : 2012.09.26 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -40VMTB15P04J3 ID -50ARDS(ON)@VGS=-10V, ID=-25A 9.7m(typ) RDS(ON)@VGS=-4.5V, ID=-15A 12.7m(typ) Features Single Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead

 9.1. Size:202K  motorola
 mtb15n06e.pdf pdf_icon

MTB15P04J3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB15N06E/DDesigner's Data SheetMTB15N06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 15 AMPERESRDS(on) = 0.12 OHMThe D2PAK package has the capability of housing a larger die60 VOLTSthan any existing surface mo

 9.2. Size:231K  motorola
 mtb15n06erev1.pdf pdf_icon

MTB15P04J3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB15N06E/DDesigner's Data SheetMTB15N06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 15 AMPERESRDS(on) = 0.12 OHMThe D2PAK package has the capability of housing a larger die60 VOLTSthan any existing surface mo

 9.3. Size:274K  motorola
 mtb15n06v.pdf pdf_icon

MTB15P04J3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB15N06V/DDesigner's Data SheetMTB15N06VTMOS VPower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 15 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.12 OHMarea product about onehalf that of standard

MOSTRAR MÁS

Otros transistores... MTB12N03J3 , MTB12N03Q8 , MTB12N04J3 , MTB12P04J3 , MTB12P06J3 , MTB13N03Q8 , MTB14A03V8 , MTB14P03Q8 , IRFP260 , MTB16P04J3 , MTB17A03Q8 , MTB17A03V8 , MTB17N03Q8 , MTB1D7N03ATH8 , MTB1D7N03E3 , MTB1K6N06KS6R , MTB20A03Q8 .

History: HFU1N60S

 

 
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