MTB15P04J3 Specs and Replacement

Type Designator: MTB15P04J3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 325 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0097 Ohm

Package: TO-252

MTB15P04J3 substitution

- MOSFET ⓘ Cross-Reference Search

 

MTB15P04J3 datasheet

 ..1. Size:307K  cystek
 mtb15p04j3.pdf pdf_icon

MTB15P04J3

Spec. No. C877J3 Issued Date 2012.09.26 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -40V MTB15P04J3 ID -50A RDS(ON)@VGS=-10V, ID=-25A 9.7m (typ) RDS(ON)@VGS=-4.5V, ID=-15A 12.7m (typ) Features Single Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead... See More ⇒

 9.1. Size:202K  motorola
 mtb15n06e.pdf pdf_icon

MTB15P04J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB15N06E/D Designer's Data Sheet MTB15N06E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 15 AMPERES RDS(on) = 0.12 OHM The D2PAK package has the capability of housing a larger die 60 VOLTS than any existing surface mo... See More ⇒

 9.2. Size:231K  motorola
 mtb15n06erev1.pdf pdf_icon

MTB15P04J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB15N06E/D Designer's Data Sheet MTB15N06E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 15 AMPERES RDS(on) = 0.12 OHM The D2PAK package has the capability of housing a larger die 60 VOLTS than any existing surface mo... See More ⇒

 9.3. Size:274K  motorola
 mtb15n06v.pdf pdf_icon

MTB15P04J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB15N06V/D Designer's Data Sheet MTB15N06V TMOS V Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 15 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.12 OHM area product about one half that of standard ... See More ⇒

SHOW MORE

Detailed specifications: MTB12N03J3, MTB12N03Q8, MTB12N04J3, MTB12P04J3, MTB12P06J3, MTB13N03Q8, MTB14A03V8, MTB14P03Q8, IRFP260, MTB16P04J3, MTB17A03Q8, MTB17A03V8, MTB17N03Q8, MTB1D7N03ATH8, MTB1D7N03E3, MTB1K6N06KS6R, MTB20A03Q8

Keywords - MTB15P04J3 MOSFET specs

 MTB15P04J3 cross reference

 MTB15P04J3 equivalent finder

 MTB15P04J3 pdf lookup

 MTB15P04J3 substitution

 MTB15P04J3 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility