MTB16P04J3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB16P04J3

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 1642 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: TO-252

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MTB16P04J3 datasheet

 ..1. Size:334K  cystek
 mtb16p04j3.pdf pdf_icon

MTB16P04J3

Spec. No. C706J3 Issued Date 2009.04.23 CYStech Electronics Corp. Revised Date 2010.05.17 Page No. 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -40V MTB16P04J3 ID -25A 16m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circuit Outline MTB16P04J3 TO-252 G Gate D Drain

 9.1. Size:259K  motorola
 mtb16n25e.pdf pdf_icon

MTB16P04J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB16N25E/D Designer's Data Sheet MTB16N25E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 16 AMPERES 250 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.25 OHM than any existing surface m

 9.2. Size:365K  cystek
 mtb160n25j3.pdf pdf_icon

MTB16P04J3

Spec. No. C977J3 Issued Date 2014.10.02 CYStech Electronics Corp. Revised Date Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 250V MTB160N25J3 ID@VGS=10V 18A VGS=10V, ID=9A 132m RDSON(TYP) VGS=4.5V, ID=6A 138m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline TO-252(DPAK

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