MTB16P04J3 Datasheet and Replacement. Cross Reference Search

MTB16P04J3 Datasheet (PDF)

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Spec. No. : C706J3 Issued Date : 2009.04.23 CYStech Electronics Corp.Revised Date : 2010.05.17 Page No. : 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -40VMTB16P04J3 ID -25A16m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circuit Outline MTB16P04J3 TO-252 GGate DDrain

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB16N25E/DDesigner's Data SheetMTB16N25ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 16 AMPERES250 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.25 OHMthan any existing surface m

9.2. Size:365K cystek
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Spec. No. : C977J3 Issued Date : 2014.10.02 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 250VMTB160N25J3 ID@VGS=10V 18AVGS=10V, ID=9A 132m RDSON(TYP) VGS=4.5V, ID=6A 138m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline TO-252(DPAK

Datasheet: MTB12N03Q8 , MTB12N04J3 , MTB12P04J3 , MTB12P06J3 , MTB13N03Q8 , MTB14A03V8 , MTB14P03Q8 , MTB15P04J3 , 2SK3568 , MTB17A03Q8 , MTB17A03V8 , MTB17N03Q8 , MTB1D7N03ATH8 , MTB1D7N03E3 , MTB1K6N06KS6R , MTB20A03Q8 , MTB20C03J4 .