MTB17A03V8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB17A03V8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 76 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: EDFN3X3

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MTB17A03V8 datasheet

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 mtb17a03v8.pdf pdf_icon

MTB17A03V8

Spec. No. C396V8 Issued Date 2013.08.09 CYStech Electronics Corp. Revised Date 2013.08.14 Page No. 1/9 Dual N-Channel Logic Level Enhancement Mode MOSFET BVDSS 30V MTB17A03V8 ID 7A 16m VGS=10V, ID=6A RDSON(TYP) 25m VGS=4.5V, ID=4A Description The MTB17A03V8 consists of two N-channel enhancement-mode MOSFETs in a DFN3 3 package, providing the designer

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MTB17A03V8

Spec. No. C729Q8 Issued Date 2009.07.01 CYStech Electronics Corp. Revised Date 2014.01.20 Page No. 1/ 9 Dual N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB17A03Q8 ID 10A 8.6m VGS=10V, ID=10A RDSON(TYP) 12.6m VGS=4.5V, ID=6A Description The MTB17A03Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra l

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MTB17A03V8

Spec. No. C729Q8 Issued Date 2009.09.09 CYStech Electronics Corp. Revised Date 2011.10.03 Page No. 1/8 N-Channel Logic Level Enhancement Mode MOSFET BVDSS 30V MTB17N03Q8 RDSON(MAX) 15m ID 10A Description The MTB17N03Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost effectiveness. The

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