MTB17A03V8 Datasheet and Replacement
Type Designator: MTB17A03V8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 76 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: EDFN3X3
- MOSFET Cross-Reference Search
MTB17A03V8 Datasheet (PDF)
mtb17a03v8.pdf

Spec. No. : C396V8 Issued Date : 2013.08.09 CYStech Electronics Corp.Revised Date : 2013.08.14 Page No. : 1/9 Dual N-Channel Logic Level Enhancement Mode MOSFET BVDSS 30VMTB17A03V8ID 7A16m VGS=10V, ID=6A RDSON(TYP) 25m VGS=4.5V, ID=4A Description The MTB17A03V8 consists of two N-channel enhancement-mode MOSFETs in a DFN3 3 package, providing the designer
mtb17a03q8.pdf

Spec. No. : C729Q8 Issued Date : 2009.07.01 CYStech Electronics Corp.Revised Date : 2014.01.20 Page No. : 1/ 9 Dual N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB17A03Q8 ID 10A8.6m VGS=10V, ID=10A RDSON(TYP) 12.6mVGS=4.5V, ID=6A Description The MTB17A03Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra l
mtb17n03q8.pdf

Spec. No. : C729Q8 Issued Date : 2009.09.09 CYStech Electronics Corp.Revised Date : 2011.10.03 Page No. : 1/8 N-Channel Logic Level Enhancement Mode MOSFET BVDSS 30VMTB17N03Q8 RDSON(MAX) 15mID 10ADescription The MTB17N03Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost effectiveness. The
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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History: FQD4N25TM | 2SK3192



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