MTB23C04J4 Todos los transistores

 

MTB23C04J4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTB23C04J4
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 22(26) A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16(20) nS
   Cossⓘ - Capacitancia de salida: 57(243) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02(0.0133) Ohm
   Paquete / Cubierta: TO-252-4L
 

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MTB23C04J4 Datasheet (PDF)

 ..1. Size:355K  cystek
 mtb23c04j4.pdf pdf_icon

MTB23C04J4

Spec. No. : C947J4 Issued Date : 2014.01.29 CYStech Electronics Corp.Revised Date : Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTB23C04J4 BVDSS 40V -40VID 5.2A -6.2ARDSON(typ.) @VGS=(-)10V 20 m 13.3 m RDSON(typ.) @VGS=(-)4.5V 28 m 17.8 m Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free pa

 9.1. Size:249K  motorola
 mtb23p06vrev1x.pdf pdf_icon

MTB23C04J4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06V/DDesigner's Data SheetMTB23P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.120 OHMtance area product abou

 9.2. Size:242K  motorola
 mtb23p06e.pdf pdf_icon

MTB23C04J4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06E/DDesigner's Data SheetMTB23P06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.12 OHMthan any existing surface mo

 9.3. Size:217K  motorola
 mtb23p06v.pdf pdf_icon

MTB23C04J4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06V/DDesigner's Data SheetMTB23P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.120 OHMtance area product abou

MOSTRAR MÁS

Otros transistores... MTB1K6N06KS6R , MTB20A03Q8 , MTB20C03J4 , MTB20N03AQ8 , MTB20N03Q8 , MTB20N06J3 , MTB20P03L3 , MTB22N04J3 , IRFP250 , MTB24B03Q8 , MTB25A04Q8 , MTB25N04J3 , MTB25P04V8 , MTB25P06FP , MTB30N06J3 , MTB30N06Q8 , MTB30N06V8 .

 

 
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