MTB23C04J4 Todos los transistores

 ..1. Size:355K  cystek
 mtb23c04j4.pdf

Spec. No. C947J4 Issued Date 2014.01.29 CYStech Electronics Corp. Revised Date Page No. 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CH MTB23C04J4 BVDSS 40V -40V ID 5.2A -6.2A RDSON(typ.) @VGS=(-)10V 20 m 13.3 m RDSON(typ.) @VGS=(-)4.5V 28 m 17.8 m Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free pa

 9.1. Size:249K  motorola
 mtb23p06vrev1x.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB23P06V/D Designer's Data Sheet MTB23P06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 23 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.120 OHM tance area product abou

 9.2. Size:242K  motorola
 mtb23p06e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB23P06E/D Designer's Data Sheet MTB23P06E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 23 AMPERES 60 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.12 OHM than any existing surface mo

 9.3. Size:217K  motorola
 mtb23p06v.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB23P06V/D Designer's Data Sheet MTB23P06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 23 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.120 OHM tance area product abou

 9.4. Size:280K  motorola
 mtb23p06erev0.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB23P06E/D Designer's Data Sheet MTB23P06E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 23 AMPERES 60 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.12 OHM than any existing surface mo

 9.5. Size:97K  onsemi
 mtb23p06vt4.pdf

MTB23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high http //onsemi.com speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge 23 AMPERES circuits where d