Справочник MOSFET. MTB23C04J4

 

MTB23C04J4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MTB23C04J4
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 22(26) A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 16(20) ns
   Cossⓘ - Выходная емкость: 57(243) pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02(0.0133) Ohm
   Тип корпуса: TO-252-4L

 Аналог (замена) для MTB23C04J4

 

 

MTB23C04J4 Datasheet (PDF)

 ..1. Size:355K  cystek
 mtb23c04j4.pdf

MTB23C04J4 MTB23C04J4

Spec. No. : C947J4 Issued Date : 2014.01.29 CYStech Electronics Corp.Revised Date : Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTB23C04J4 BVDSS 40V -40VID 5.2A -6.2ARDSON(typ.) @VGS=(-)10V 20 m 13.3 m RDSON(typ.) @VGS=(-)4.5V 28 m 17.8 m Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free pa

 9.1. Size:249K  motorola
 mtb23p06vrev1x.pdf

MTB23C04J4 MTB23C04J4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06V/DDesigner's Data SheetMTB23P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.120 OHMtance area product abou

 9.2. Size:242K  motorola
 mtb23p06e.pdf

MTB23C04J4 MTB23C04J4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06E/DDesigner's Data SheetMTB23P06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.12 OHMthan any existing surface mo

 9.3. Size:217K  motorola
 mtb23p06v.pdf

MTB23C04J4 MTB23C04J4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06V/DDesigner's Data SheetMTB23P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.120 OHMtance area product abou

 9.4. Size:280K  motorola
 mtb23p06erev0.pdf

MTB23C04J4 MTB23C04J4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06E/DDesigner's Data SheetMTB23P06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.12 OHMthan any existing surface mo

 9.5. Size:97K  onsemi
 mtb23p06vt4.pdf

MTB23C04J4 MTB23C04J4

MTB23P06VPreferred DevicePower MOSFET23 Amps, 60 VoltsPChannel D2PAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highhttp://onsemi.comspeed switching applications in power supplies, converters and powermotor controls, these devices are particularly well suited for bridge23 AMPEREScircuits where d

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