MTB23C04J4
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTB23C04J4
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4
V
|Id|ⓘ - Maximum Drain Current: 22(26)
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 16(20)
nS
Cossⓘ -
Output Capacitance: 57(243)
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02(0.0133)
Ohm
Package:
TO-252-4L
MTB23C04J4
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTB23C04J4
Datasheet (PDF)
..1. Size:355K cystek
mtb23c04j4.pdf 
Spec. No. : C947J4 Issued Date : 2014.01.29 CYStech Electronics Corp.Revised Date : Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTB23C04J4 BVDSS 40V -40VID 5.2A -6.2ARDSON(typ.) @VGS=(-)10V 20 m 13.3 m RDSON(typ.) @VGS=(-)4.5V 28 m 17.8 m Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free pa
9.1. Size:249K motorola
mtb23p06vrev1x.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06V/DDesigner's Data SheetMTB23P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.120 OHMtance area product abou
9.2. Size:242K motorola
mtb23p06e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06E/DDesigner's Data SheetMTB23P06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.12 OHMthan any existing surface mo
9.3. Size:217K motorola
mtb23p06v.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06V/DDesigner's Data SheetMTB23P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.120 OHMtance area product abou
9.4. Size:280K motorola
mtb23p06erev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06E/DDesigner's Data SheetMTB23P06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.12 OHMthan any existing surface mo
9.5. Size:97K onsemi
mtb23p06vt4.pdf
MTB23P06VPreferred DevicePower MOSFET23 Amps, 60 VoltsPChannel D2PAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highhttp://onsemi.comspeed switching applications in power supplies, converters and powermotor controls, these devices are particularly well suited for bridge23 AMPEREScircuits where d
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