All MOSFET. MTB23C04J4 Datasheet

 

MTB23C04J4 Datasheet and Replacement


   Type Designator: MTB23C04J4
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22(26) A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 16(20) nS
   Cossⓘ - Output Capacitance: 57(243) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02(0.0133) Ohm
   Package: TO-252-4L
 

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MTB23C04J4 Datasheet (PDF)

 ..1. Size:355K  cystek
mtb23c04j4.pdf pdf_icon

MTB23C04J4

Spec. No. : C947J4 Issued Date : 2014.01.29 CYStech Electronics Corp.Revised Date : Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTB23C04J4 BVDSS 40V -40VID 5.2A -6.2ARDSON(typ.) @VGS=(-)10V 20 m 13.3 m RDSON(typ.) @VGS=(-)4.5V 28 m 17.8 m Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free pa

 9.1. Size:249K  motorola
mtb23p06vrev1x.pdf pdf_icon

MTB23C04J4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06V/DDesigner's Data SheetMTB23P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.120 OHMtance area product abou

 9.2. Size:242K  motorola
mtb23p06e.pdf pdf_icon

MTB23C04J4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06E/DDesigner's Data SheetMTB23P06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.12 OHMthan any existing surface mo

 9.3. Size:217K  motorola
mtb23p06v.pdf pdf_icon

MTB23C04J4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB23P06V/DDesigner's Data SheetMTB23P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 23 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.120 OHMtance area product abou

Datasheet: MTB1K6N06KS6R , MTB20A03Q8 , MTB20C03J4 , MTB20N03AQ8 , MTB20N03Q8 , MTB20N06J3 , MTB20P03L3 , MTB22N04J3 , IRFP250 , MTB24B03Q8 , MTB25A04Q8 , MTB25N04J3 , MTB25P04V8 , MTB25P06FP , MTB30N06J3 , MTB30N06Q8 , MTB30N06V8 .

History: SJMN088R65F

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