MTB25N04J3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MTB25N04J3 Datasheet (PDF)

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Spec. No. : C884J3 Issued Date : 2012.12.07 CYStech Electronics Corp.Revised Date : 2014.03.14 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40VMTB25N04J3 ID 29ARDS(ON)@VGS=10V, ID=12A 20m(typ) RDS(ON)@VGS=4.5V, ID=10A 27m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalen

9.1. Size:436K cystek
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Spec. No. : C955Q8 Issued Date : 2015.03.09 CYStech Electronics Corp.Revised Date : Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTB25C04Q8 BVDSS 40V -40VID @ TA=25C, VGS=10V(-10V) 5.7A -4.9AID @ TA=70C, VGS=10V(-10V) 4.8A -4.1AID @ TC=25C, VGS=10V(-10V) 10A -8.6AID @ TC=100C, VGS=10V(-10V) 7.1A -6.1ARDSON(typ.) @VGS=(-)10V 21.

9.2. Size:373K cystek
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Spec. No. : C878V8 Issued Date : 2014.03.11 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Enhancement Mode MOSFET BVDSS -40VMTB25P04V8 ID -27ARDSON@VGS=-10V, ID=-10A 13 m(typ) RDSON@VGS=-4.5V, ID=-6A 19 m(typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and halogen-free packag

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mtb25p06fp.pdf pdf_icon

Spec. No. : C584FP Issued Date : 2014.07.03 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60VMTB25P06FP ID -52ARDS(ON)@VGS=-10V, ID=-20A 18.8m(typ) RDS(ON)@VGS=-4.5V, ID=-20A 21.8m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circu