MTB25N04J3 Specs and Replacement

Type Designator: MTB25N04J3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 29 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 51 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO-252

MTB25N04J3 substitution

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MTB25N04J3 datasheet

 ..1. Size:367K  cystek
 mtb25n04j3.pdf pdf_icon

MTB25N04J3

Spec. No. C884J3 Issued Date 2012.12.07 CYStech Electronics Corp. Revised Date 2014.03.14 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40V MTB25N04J3 ID 29A RDS(ON)@VGS=10V, ID=12A 20m (typ) RDS(ON)@VGS=4.5V, ID=10A 27m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalen... See More ⇒

 9.1. Size:436K  cystek
 mtb25c04q8.pdf pdf_icon

MTB25N04J3

Spec. No. C955Q8 Issued Date 2015.03.09 CYStech Electronics Corp. Revised Date Page No. 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTB25C04Q8 BVDSS 40V -40V ID @ TA=25 C, VGS=10V(-10V) 5.7A -4.9A ID @ TA=70 C, VGS=10V(-10V) 4.8A -4.1A ID @ TC=25 C, VGS=10V(-10V) 10A -8.6A ID @ TC=100 C, VGS=10V(-10V) 7.1A -6.1A RDSON(typ.) @VGS=(-)10V 21.... See More ⇒

 9.2. Size:373K  cystek
 mtb25p04v8.pdf pdf_icon

MTB25N04J3

Spec. No. C878V8 Issued Date 2014.03.11 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode MOSFET BVDSS -40V MTB25P04V8 ID -27A RDSON@VGS=-10V, ID=-10A 13 m (typ) RDSON@VGS=-4.5V, ID=-6A 19 m (typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and halogen-free packag... See More ⇒

 9.3. Size:339K  cystek
 mtb25p06fp.pdf pdf_icon

MTB25N04J3

Spec. No. C584FP Issued Date 2014.07.03 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTB25P06FP ID -52A RDS(ON)@VGS=-10V, ID=-20A 18.8m (typ) RDS(ON)@VGS=-4.5V, ID=-20A 21.8m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circu... See More ⇒

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Detailed specifications: MTB20N03AQ8, MTB20N03Q8, MTB20N06J3, MTB20P03L3, MTB22N04J3, MTB23C04J4, MTB24B03Q8, MTB25A04Q8, TK10A60D, MTB25P04V8, MTB25P06FP, MTB30N06J3, MTB30N06Q8, MTB30N06V8, MTB30P06J3, MTB35N04J3, MTB3D0N03ATH8

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