MTB40N06E3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTB40N06E3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 26 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 12 nC
   trⓘ - Tiempo de subida: 3.5 nS
   Cossⓘ - Capacitancia de salida: 47.3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: TO-220AB

Búsqueda de reemplazo de MOSFET MTB40N06E3

MTB40N06E3 Datasheet (PDF)

..1. Size:261K cystek
mtb40n06e3.pdf

Spec. No. : C708E3 Issued Date : 2011.12.26 CYStech Electronics Corp.Revised Date : Page No. : 1/7 N -Channel Enhancement Mode Power MOSFET BVDSS 60VMTB40N06E3 ID 26A35m RDSON(TYP)@VGS=10V,ID=10A Features Low Gate Charge 40m RDSON(TYP)@VGS=4.5V,ID=8A Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline TO-220 MTB

8.1. Size:198K motorola
mtb40n10e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB40N10E/DAdvance Data SheetMTB40N10ETMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high40 AMPERESenergy in the avalanche and commutation modes. The new energy100 VOLTSefficient design also offers a drain

8.2. Size:192K motorola
mtb40n10erev1.pdf

9.1. Size:340K cystek
mtb40p04j3.pdf

Spec. No. : C595J3 Issued Date : 2010.04.19 CYStech Electronics Corp.Revised Date : Page No. : 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -40VMTB40P04J3 ID -12A40.5m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circuit Outline MTB40P04J3 TO-252 GGate DDrain G D S S

9.2. Size:696K cystek
mtb40p06q8.pdf

Spec. No. : C796Q8 Issued Date : 2011.12.23 CYStech Electronics Corp. Revised Date : 2018.03.09 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -60V MTB40P06Q8 ID @ TA=25C, VGS=-10V -6.2A RDSON@VGS=-10V, ID=-6.2A 33m(typ) RDSON@VGS=-4.5V,ID=-5A 45m(typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-f

9.3. Size:322K cystek
mtb40p06v8.pdf

Spec. No. : C796V8 Issued Date : 2013.10.17 CYStech Electronics Corp.Revised Date : 2013.10.23 Page No. : 1/9 P-Channel Enhancement Mode MOSFET BVDSS -60VMTB40P06V8 ID -5ARDSON@VGS=-10V, ID=-4.9A 48m(typ) RDSON@VGS=-4.5V, ID=-3A 59m(typ) Description The MTB40P06V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swit

9.4. Size:295K cystek
mtb40p06j3.pdf

Spec. No. : C796J3 Issued Date : 2010.02.11 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60VMTB40P06J3 ID -17A62m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equivalent Circuit Outline MTB40P06J3 TO-252(DPAK)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: