MTB40N06E3
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTB40N06E3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 26
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 3.5
nS
Cossⓘ -
Output Capacitance: 47.3
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035
Ohm
Package:
TO-220AB
MTB40N06E3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTB40N06E3
Datasheet (PDF)
..1. Size:261K cystek
mtb40n06e3.pdf 
Spec. No. : C708E3 Issued Date : 2011.12.26 CYStech Electronics Corp.Revised Date : Page No. : 1/7 N -Channel Enhancement Mode Power MOSFET BVDSS 60VMTB40N06E3 ID 26A35m RDSON(TYP)@VGS=10V,ID=10A Features Low Gate Charge 40m RDSON(TYP)@VGS=4.5V,ID=8A Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline TO-220 MTB
8.1. Size:198K motorola
mtb40n10e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB40N10E/DAdvance Data SheetMTB40N10ETMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high40 AMPERESenergy in the avalanche and commutation modes. The new energy100 VOLTSefficient design also offers a drain
8.2. Size:192K motorola
mtb40n10erev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB40N10E/DAdvance Data SheetMTB40N10ETMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high40 AMPERESenergy in the avalanche and commutation modes. The new energy100 VOLTSefficient design also offers a drain
9.1. Size:340K cystek
mtb40p04j3.pdf
Spec. No. : C595J3 Issued Date : 2010.04.19 CYStech Electronics Corp.Revised Date : Page No. : 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -40VMTB40P04J3 ID -12A40.5m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circuit Outline MTB40P04J3 TO-252 GGate DDrain G D S S
9.2. Size:696K cystek
mtb40p06q8.pdf
Spec. No. : C796Q8 Issued Date : 2011.12.23 CYStech Electronics Corp. Revised Date : 2018.03.09 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -60V MTB40P06Q8 ID @ TA=25C, VGS=-10V -6.2A RDSON@VGS=-10V, ID=-6.2A 33m(typ) RDSON@VGS=-4.5V,ID=-5A 45m(typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-f
9.3. Size:322K cystek
mtb40p06v8.pdf
Spec. No. : C796V8 Issued Date : 2013.10.17 CYStech Electronics Corp.Revised Date : 2013.10.23 Page No. : 1/9 P-Channel Enhancement Mode MOSFET BVDSS -60VMTB40P06V8 ID -5ARDSON@VGS=-10V, ID=-4.9A 48m(typ) RDSON@VGS=-4.5V, ID=-3A 59m(typ) Description The MTB40P06V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swit
9.4. Size:295K cystek
mtb40p06j3.pdf
Spec. No. : C796J3 Issued Date : 2010.02.11 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60VMTB40P06J3 ID -17A62m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equivalent Circuit Outline MTB40P06J3 TO-252(DPAK)
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