MTB40P04J3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB40P04J3

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 36 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 405 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0365 Ohm

Encapsulados: TO-252

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MTB40P04J3 datasheet

 ..1. Size:340K  cystek
 mtb40p04j3.pdf pdf_icon

MTB40P04J3

Spec. No. C595J3 Issued Date 2010.04.19 CYStech Electronics Corp. Revised Date Page No. 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -40V MTB40P04J3 ID -12A 40.5m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circuit Outline MTB40P04J3 TO-252 G Gate D Drain G D S S

 7.1. Size:696K  cystek
 mtb40p06q8.pdf pdf_icon

MTB40P04J3

Spec. No. C796Q8 Issued Date 2011.12.23 CYStech Electronics Corp. Revised Date 2018.03.09 Page No. 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -60V MTB40P06Q8 ID @ TA=25 C, VGS=-10V -6.2A RDSON@VGS=-10V, ID=-6.2A 33m (typ) RDSON@VGS=-4.5V,ID=-5A 45m (typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-f

 7.2. Size:322K  cystek
 mtb40p06v8.pdf pdf_icon

MTB40P04J3

Spec. No. C796V8 Issued Date 2013.10.17 CYStech Electronics Corp. Revised Date 2013.10.23 Page No. 1/9 P-Channel Enhancement Mode MOSFET BVDSS -60V MTB40P06V8 ID -5A RDSON@VGS=-10V, ID=-4.9A 48m (typ) RDSON@VGS=-4.5V, ID=-3A 59m (typ) Description The MTB40P06V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swit

 7.3. Size:295K  cystek
 mtb40p06j3.pdf pdf_icon

MTB40P04J3

Spec. No. C796J3 Issued Date 2010.02.11 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTB40P06J3 ID -17A 62m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equivalent Circuit Outline MTB40P06J3 TO-252(DPAK)

MOSTRAR MÁS

Otros transistores... MTB25P06FP, MTB30N06J3, MTB30N06Q8, MTB30N06V8, MTB30P06J3, MTB35N04J3, MTB3D0N03ATH8, MTB40N06E3, SI2302, MTB40P06J3, MTB40P06Q8, MTB40P06V8, MTB44P04J3, MTB45A06Q8, MTB45P03Q8, MTB4D0N03ATH8, MTB4D0N03ATV8