All MOSFET. MTB40P04J3 Datasheet

 

MTB40P04J3 MOSFET. Datasheet pdf. Equivalent

Type Designator: MTB40P04J3

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 36 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 405 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0365 Ohm

Package: TO-252

MTB40P04J3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTB40P04J3 Datasheet (PDF)

1.1. mtb40p04j3.pdf Size:340K _cystek

MTB40P04J3
MTB40P04J3

Spec. No. : C595J3 Issued Date : 2010.04.19 CYStech Electronics Corp. Revised Date : Page No. : 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -40V MTB40P04J3 ID -12A 40.5mΩ RDSON(MAX) Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package Equivalent Circuit Outline MTB40P04J3 TO-252 G:Gate D:Drain G D S S

3.1. mtb40p06v8.pdf Size:322K _cystek

MTB40P04J3
MTB40P04J3

Spec. No. : C796V8 Issued Date : 2013.10.17 CYStech Electronics Corp. Revised Date : 2013.10.23 Page No. : 1/9 P-Channel Enhancement Mode MOSFET BVDSS -60V MTB40P06V8 ID -5A RDSON@VGS=-10V, ID=-4.9A 48mΩ(typ) RDSON@VGS=-4.5V, ID=-3A 59mΩ(typ) Description The MTB40P06V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swit

3.2. mtb40p06q8.pdf Size:302K _cystek

MTB40P04J3
MTB40P04J3

Spec. No. : C796Q8 Issued Date : 2011.12.23 CYStech Electronics Corp. Revised Date : 2012.05.12 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -60V MTB40P06Q8 ID -6.2A RDSON@VGS=-10V, ID=-6.2A 33mΩ(typ) RDSON@VGS=-4.5V,ID=-5A 45mΩ(typ) Description The MTB40P06Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast

3.3. mtb40p06j3.pdf Size:295K _cystek

MTB40P04J3
MTB40P04J3

Spec. No. : C796J3 Issued Date : 2010.02.11 CYStech Electronics Corp. Revised Date : 2013.12.26 Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTB40P06J3 ID -17A 62mΩ RDSON(MAX) Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package Equivalent Circuit Outline MTB40P06J3 TO-252(DPAK)

Datasheet: MTB25P06FP , MTB30N06J3 , MTB30N06Q8 , MTB30N06V8 , MTB30P06J3 , MTB35N04J3 , MTB3D0N03ATH8 , MTB40N06E3 , IRFZ44A , MTB40P06J3 , MTB40P06Q8 , MTB40P06V8 , MTB44P04J3 , MTB45A06Q8 , MTB45P03Q8 , MTB4D0N03ATH8 , MTB4D0N03ATV8 .

 


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