MTB40P04J3 - параметры транзистора MOSFET, его аналоги, datasheet

MTB40P04J3 Datasheet (PDF)

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Spec. No. : C595J3 Issued Date : 2010.04.19 CYStech Electronics Corp.Revised Date : Page No. : 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -40VMTB40P04J3 ID -12A40.5m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circuit Outline MTB40P04J3 TO-252 GGate DDrain G D S S

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Spec. No. : C796Q8 Issued Date : 2011.12.23 CYStech Electronics Corp. Revised Date : 2018.03.09 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -60V MTB40P06Q8 ID @ TA=25C, VGS=-10V -6.2A RDSON@VGS=-10V, ID=-6.2A 33m(typ) RDSON@VGS=-4.5V,ID=-5A 45m(typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-f

7.2. Size:322K cystek
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Spec. No. : C796V8 Issued Date : 2013.10.17 CYStech Electronics Corp.Revised Date : 2013.10.23 Page No. : 1/9 P-Channel Enhancement Mode MOSFET BVDSS -60VMTB40P06V8 ID -5ARDSON@VGS=-10V, ID=-4.9A 48m(typ) RDSON@VGS=-4.5V, ID=-3A 59m(typ) Description The MTB40P06V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swit

7.3. Size:295K cystek
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Spec. No. : C796J3 Issued Date : 2010.02.11 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60VMTB40P06J3 ID -17A62m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equivalent Circuit Outline MTB40P06J3 TO-252(DPAK)

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