MTB60N06J3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB60N06J3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 20 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.2 nS

Cossⓘ - Capacitancia de salida: 56 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: TO-252

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MTB60N06J3 datasheet

 ..1. Size:280K  cystek
 mtb60n06j3.pdf pdf_icon

MTB60N06J3

Spec. No. C708J3 Issued Date 2009.04.29 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 60V MTB60N06J3 ID 16A 35m (typ.) RDSON(MAX)@VGS=10V, ID=10A 40m (typ.) RDSON(MAX)@VGS=5V, ID=8A Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalen

 6.1. Size:243K  motorola
 mtb60n06hd.pdf pdf_icon

MTB60N06J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB60N06HD/D Designer's Data Sheet MTB60N06HD HDTMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 60 AMPERES N Channel Enhancement Mode Silicon Gate 60 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.014 OHM than any existing sur

 6.2. Size:280K  motorola
 mtb60n06hdrev2x.pdf pdf_icon

MTB60N06J3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB60N06HD/D Designer's Data Sheet MTB60N06HD HDTMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 60 AMPERES N Channel Enhancement Mode Silicon Gate 60 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.014 OHM than any existing sur

 6.3. Size:293K  cystek
 mtb60n06l3.pdf pdf_icon

MTB60N06J3

Spec. No. C708L3 Issued Date 2009.05.26 CYStech Electronics Corp. Revised Date 2013.10.30 Page No. 1/8 N -Channel Enhancement Mode Power MOSFET BVDSS 60V MTB60N06L3 ID 5.9A 41m (typ) RDSON@VGS=10V, ID=5A 46m (typ) RDSON@VGS=4.5V, ID=3A Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circui

MOSTRAR MÁS

Otros transistores... MTB55N03J3, MTB55N03N3, MTB55N06Q8, MTB55N10J3, MTB55N10Q8, MTB600N03N3, MTB60A06Q8, MTB60B06Q8, IRFZ48N, MTB60N06L3, MTB60P06E3, MTB60P06H8, MTB6D0N03AH8, MTB6D0N03ATH8, MTB6D0N03ATV8, MTB80N08J3, MTB90P06J3