MTB60N06J3 MOSFET. Datasheet pdf. Equivalent

   Type Designator: MTB60N06J3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO-252

MTB60N06J3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS