2N6660 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6660
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 6.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 VCossⓘ - Capacitancia de salida: 50 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
Paquete / Cubierta: TO39
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2N6660 Datasheet (PDF)
2n6660.pdf
Supertex inc. 2N6660N-Channel Enhancement-ModeVertical DMOS FETFeaturesGeneral DescriptionThe Supertex 2N6660 is an enhancement-mode (normally- Free from secondary breakdownoff) transistor that utilizes a vertical DMOS structure and Low power drive requirementSupertexs well-proven silicon-gate manufacturing process. Ease of parallelingThis combination produ
2n6660 2n6661.pdf
2N66602N6661N-Channel Enhancement-ModeVertical DMOS FETsOrdering InformationOrder Number / PackageBVDSS /RDS(ON) ID(ON)BVDGS (max) (min) TO-3960V 3.0 1.5A 2N666090V 4.0 1.5A 2N6661High Reliability Devices Advanced DMOS TechnologySee pages 5-4 and 5-5 for MILITARY STANDARD ProcessThese enhancement-mode (normally-off) transistors utilize aFlows and Ordering Informa
2n6660-2.pdf
2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXVwww.vishay.comVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Military QualifiedVDS (V) 60 Low On-Resistence: 1.3 RDS(on) () at VGS = 10 V 3 Low Threshold: 1.7 VConfiguration Single Low Input Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output LeakageTO-205AD(TO-3
2n6660csm4.pdf
2N6660CSM4 MECHANICAL DATA NCHANNEL Dimensions in mm (inches) 1.40 0.155.59 0.13(0.055 0.006) ENHANCEMENT MODE (0.22 0.005)0.25 0.03(0.01 0.001)MOSFET 0.23rad.(0.009)V 60VDSS3 2I 1.0AD0.234 1min.(0.009)R 3.0 DS(on)1.02 0.20 2.03 0.20FEATURES (0.04 0.008) (0.08 0.008) Faster switching Low Ciss
2n6660c4a.pdf
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660C4 VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0 Fast Switching Low Threshold Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Surface Mounted Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source V
Otros transistores... 2N5485 , 2N5486 , 2N6656 , 2N6657 , 2N6658 , 2N6659 , 2N6659-LCC4 , 2N6659-SM , IRF630 , 2N6660JAN , 2N6660JANTX , 2N6660JANTXV , 2N6660-LCC4 , 2N6660-SM , 2N6661 , 2N6661-220M , 2N6661JAN .
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Recientemente añadidas las descripciónes de los transistores:
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