All MOSFET. 2N6660 Datasheet

 

2N6660 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2N6660
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 6.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 1.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO39

 2N6660 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N6660 Datasheet (PDF)

 ..1. Size:527K  supertex
2n6660.pdf

2N6660
2N6660

Supertex inc. 2N6660N-Channel Enhancement-ModeVertical DMOS FETFeaturesGeneral DescriptionThe Supertex 2N6660 is an enhancement-mode (normally- Free from secondary breakdownoff) transistor that utilizes a vertical DMOS structure and Low power drive requirementSupertexs well-proven silicon-gate manufacturing process. Ease of parallelingThis combination produ

 ..2. Size:21K  supertex
2n6660 2n6661.pdf

2N6660
2N6660

2N66602N6661N-Channel Enhancement-ModeVertical DMOS FETsOrdering InformationOrder Number / PackageBVDSS /RDS(ON) ID(ON)BVDGS (max) (min) TO-3960V 3.0 1.5A 2N666090V 4.0 1.5A 2N6661High Reliability Devices Advanced DMOS TechnologySee pages 5-4 and 5-5 for MILITARY STANDARD ProcessThese enhancement-mode (normally-off) transistors utilize aFlows and Ordering Informa

 0.1. Size:125K  vishay
2n6660-2.pdf

2N6660
2N6660

2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXVwww.vishay.comVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Military QualifiedVDS (V) 60 Low On-Resistence: 1.3 RDS(on) () at VGS = 10 V 3 Low Threshold: 1.7 VConfiguration Single Low Input Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output LeakageTO-205AD(TO-3

 0.2. Size:42K  no
2n6656-59 2n6660-61.pdf

2N6660

 0.3. Size:129K  semelab
2n6660csm4.pdf

2N6660
2N6660

2N6660CSM4 MECHANICAL DATA NCHANNEL Dimensions in mm (inches) 1.40 0.155.59 0.13(0.055 0.006) ENHANCEMENT MODE (0.22 0.005)0.25 0.03(0.01 0.001)MOSFET 0.23rad.(0.009)V 60VDSS3 2I 1.0AD0.234 1min.(0.009)R 3.0 DS(on)1.02 0.20 2.03 0.20FEATURES (0.04 0.008) (0.08 0.008) Faster switching Low Ciss

 0.4. Size:236K  semelab
2n6660c4a.pdf

2N6660
2N6660

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660C4 VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0 Fast Switching Low Threshold Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Surface Mounted Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source V

Datasheet: 2N5485 , 2N5486 , 2N6656 , 2N6657 , 2N6658 , 2N6659 , 2N6659-LCC4 , 2N6659-SM , IRFB4110 , 2N6660JAN , 2N6660JANTX , 2N6660JANTXV , 2N6660-LCC4 , 2N6660-SM , 2N6661 , 2N6661-220M , 2N6661JAN .

 

 
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