2N6966JANTXV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6966JANTXV
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 70 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 1.8 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
Paquete / Cubierta: TO213
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2N6966JANTXV Datasheet (PDF)
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2n696 2n697.pdf
TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Total Power Dissipation @ T = 250C (1) 0.6 W A PT @ T = 250C (2) 2.0 W C 0 Operating & Storage Juncti
Otros transistores... 2N6961 , 2N6961A , 2N6962 , 2N6963 , 2N6964 , 2N6965 , 2N6966 , 2N6966JANTX , IRFZ44N , 2N6967 , 2N6967JANTX , 2N6967JANTXV , 2N6968 , 2N6968JANTX , 2N6968JANTXV , 2N6969 , 2N6969JANTX .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP2714SD | AP2714QD | AP25P30Q | AP25P06Q | AP25P06K | AP25N06Q | AP25N06K | AP2335 | AP2318A | AP2317SD | AP2317QD | AP2317A | AP2316 | AP2310 | AP2301B | AP20P30S
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