2N6966JANTXV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N6966JANTXV

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 70 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 1.8 pF

Resistencia drenaje-fuente RDS(on): 0.085 Ohm

Empaquetado / Estuche: TO213

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2N6966JANTXV Datasheet (PDF)

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