2N6966JANTXV Datasheet and Replacement
Type Designator: 2N6966JANTXV
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 1.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TO213
2N6966JANTXV substitution
2N6966JANTXV Datasheet (PDF)
2n6963 2n6965 2n7100 2n7101 2n7102 2n710.pdf
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2n696 2n697.pdf
TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Total Power Dissipation @ T = 250C (1) 0.6 W APT @ T = 250C (2) 2.0 W C0Operating & Storage Juncti
Datasheet: 2N6961 , 2N6961A , 2N6962 , 2N6963 , 2N6964 , 2N6965 , 2N6966 , 2N6966JANTX , IRFZ44N , 2N6967 , 2N6967JANTX , 2N6967JANTXV , 2N6968 , 2N6968JANTX , 2N6968JANTXV , 2N6969 , 2N6969JANTX .
History: 4N70G-TF1-T | DMN3016LPS-13 | OSG60R031HZF
Keywords - 2N6966JANTXV MOSFET datasheet
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History: 4N70G-TF1-T | DMN3016LPS-13 | OSG60R031HZF
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