MTE05N08E3 Todos los transistores

 ..1. Size:277K  cystek
 mte05n08e3.pdf

 8.1. Size:277K  cystek
 mte05n10e3.pdf

Spec. No. C928E3 Issued Date 2013.11.04 CYStech Electronics Corp. Revised Date 2013.11.12 Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTE05N10E3 ID 140A 5.9m RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 6.2m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Charact

 8.2. Size:349K  cystek
 mte05n10fp.pdf

Spec. No. C928FP Issued Date 2015.03.16 CYStech Electronics Corp. Revised Date Page No. 1/ 8 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTE05N10FP ID @ VGS=10V, TC=25 C 109A 5.9m RDSON(TYP) @ VGS=10V, ID=20A 6.2m RDSON(TYP) @ VGS=7V, ID=20A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Ch

 9.1. Size:468K  1
 mte050n15brv8.pdf

Spec. No. C033V8 Issued Date 2017.10.05 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET MTE050N15BRV8 BVDSS 150V ID @ TC=25 C, VGS=10V 12.4A ID @ TA=25 C, VGS=10V 4.3A 49.1m VGS=10V, ID=3.4A Features RDSON(TYP) 58.5m VGS=6V, ID=3.3A Single Drive Requirement Low On-resistance Fast Switchi

 9.2. Size:858K  1
 mte050n15brh8.pdf

Spec. No. C033H8 Issued Date 2017.11.15 CYStech Electronics Corp. Revised Date Page No. 1/11 N-Channel Enhancement Mode Power MOSFET MTE050N15BRH8 BVDSS 150V ID@VGS=10V, TC=25 C 16A ID@VGS=10V, TA=25 C 4.3A RDS(ON)@VGS=10V, ID=3.4A 49.1m (typ) Features RDS(ON)@VGS=6V, ID=3.3A 58.5 m (typ) Single Drive Requirement Low On-resistance Fast Switchi

 9.3. Size:468K  cystek
 mte050n15brv8.pdf

Spec. No. C033V8 Issued Date 2017.10.05 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET MTE050N15BRV8 BVDSS 150V ID @ TC=25 C, VGS=10V 12.4A ID @ TA=25 C, VGS=10V 4.3A 49.1m VGS=10V, ID=3.4A Features RDSON(TYP) 58.5m VGS=6V, ID=3.3A Single Drive Requirement Low On-resistance Fast Switchi

 9.4. Size:858K  cystek
 mte050n15brh8.pdf

Spec. No. C033H8 Issued Date 2017.11.15 CYStech Electronics Corp. Revised Date Page No. 1/11 N-Channel Enhancement Mode Power MOSFET MTE050N15BRH8 BVDSS 150V ID@VGS=10V, TC=25 C 16A ID@VGS=10V, TA=25 C 4.3A RDS(ON)@VGS=10V, ID=3.4A 49.1m (typ) Features RDS(ON)@VGS=6V, ID=3.3A 58.5 m (typ) Single Drive Requirement Low On-resistance Fast Switchi